BSR802NL6327HTSA1 vs BSD235CH6327XTSA1 Comparison

Detailed side-by-side comparison of BSR802NL6327HTSA1 by Infineon and BSD235CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSR802NL6327HTSA1 BSD235CH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.15 $0.12
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSR802NL6327HTSA1
Technology OptiMOS 2 (N-Channel Trench MOSFET) OptiMOS™ low-voltage
Channel Type N-Channel
Drain-Source Voltage (VDS) max 20 V
Continuous Drain Current (ID) max 3.7 A (Ta=25C)
Power Dissipation (PD) max 500 mW (Ta=25C)
On-Resistance (RDS(on)) typ 23 mOhm @ VGS=4.5 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value]
Package PG-SC59-3 (SC-59 / SOT-346)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55C to +150C
Qualification Automotive
RoHS Status Compliant Compliant (lead-free)
Pin Count 3 6
Part Family OptiMOS™
Configuration N+P complementary dual MOSFET
Drain-to-Source Voltage (VDS) 20 V
N-Channel Continuous Drain Current (ID) 950 mA
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity)
Total Power Dissipation (Ptot) 500 mW
Package Type PG-SOT363-6-1 (SOT-363, 6-pin)
Operating Temperature Range -55 °C to +150 °C (junction)
Polarity N-channel + P-channel
Channel Mode Enhancement
MSL Level 1

Datasheets & Resources

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