BSR802NL6327HTSA1 vs BSD235CH6327XTSA1 Comparison
Detailed side-by-side comparison of BSR802NL6327HTSA1 by Infineon and BSD235CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ ActiveSpecification Comparison
| Parameter | BSR802NL6327HTSA1 | BSD235CH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSR802NL6327HTSA1 | — |
| Technology | OptiMOS 2 (N-Channel Trench MOSFET) | OptiMOS™ low-voltage |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 20 V | — |
| Continuous Drain Current (ID) max | 3.7 A (Ta=25C) | — |
| Power Dissipation (PD) max | 500 mW (Ta=25C) | — |
| On-Resistance (RDS(on)) typ | 23 mOhm @ VGS=4.5 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Package | PG-SC59-3 (SC-59 / SOT-346) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55C to +150C | — |
| Qualification | Automotive | — |
| RoHS Status | Compliant | Compliant (lead-free) |
| Pin Count | 3 | 6 |
| Part Family | — | OptiMOS™ |
| Configuration | — | N+P complementary dual MOSFET |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| N-Channel Continuous Drain Current (ID) | — | 950 mA |
| P-Channel Continuous Drain Current (ID) | — | 530 mA (negative polarity) |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Package Type | — | PG-SOT363-6-1 (SOT-363, 6-pin) |
| Operating Temperature Range | — | -55 °C to +150 °C (junction) |
| Polarity | — | N-channel + P-channel |
| Channel Mode | — | Enhancement |
| MSL Level | — | 1 |