BSR802NL6327HTSA1 vs BSD235CH6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSR802NL6327HTSA1 sa pamamagitan ng Infineon at BSD235CH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSR802NL6327HTSA1 BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon

BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon

BSR802NL6327HTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSR802NL6327HTSA1 BSD235CH6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSR802NL6327HTSA1 —
Technology OptiMOS 2 (N-Channel Trench MOSFET) OptiMOS™ low-voltage
Channel Type N-Channel —
Drain-Source Voltage (VDS) max 20 V —
Continuous Drain Current (ID) max 3.7 A (Ta=25C) —
Power Dissipation (PD) max 500 mW (Ta=25C) —
On-Resistance (RDS(on)) typ 23 mOhm @ VGS=4.5 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Packhaging PG-SC59-3 (SC-59 / SOT-346) —
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature ng Junction na Operasyon -55C to +150C —
Qualification Automotive —
Tindminan RoHS Compliant Compliant (lead-free)
Bilang ng Pin 3 6
Part Family — OptiMOS™
Configuration — N+P complementary dual MOSFET
Drain-to-Source Voltage (VDS) — 20 V
N-Channel Continuous Drain Current (ID) — 950 mA
P-Channel Continuous Drain Current (ID) — 530 mA (negative polarity)
Total Power Dissipation (Ptot) — 500 mW
Package Type — PG-SOT363-6-1 (SOT-363, 6-pin)
Hanay ng Temperature na Operasyon — -55 °C to +150 °C (junction)
Polarity — N-channel + P-channel
Channel Mode — Enhancement
Level ng MSL — 1

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