BSR802NL6327HTSA1 vs BSD235CH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSR802NL6327HTSA1 disebabkan oleh Infineon dan BSD235CH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSR802NL6327HTSA1 BSD235CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSR802NL6327HTSA1 —
Technology OptiMOS 2 (N-Channel Trench MOSFET) OptiMOS™ low-voltage
Channel Type N-Channel —
Drain-Source Voltage (VDS) max 20 V —
Continuous Drain Current (ID) max 3.7 A (Ta=25C) —
Power Dissipation (PD) max 500 mW (Ta=25C) —
On-Resistance (RDS(on)) typ 23 mOhm @ VGS=4.5 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Kemasan PG-SC59-3 (SC-59 / SOT-346) —
Jenis Pemasangan Surface Mount Surface Mount
Suhu Hubungan Operasi -55C to +150C —
Qualification Automotive —
Status RoHS Compliant Compliant (lead-free)
Kiraan Pin 3 6
Part Family — OptiMOS™
Configuration — N+P complementary dual MOSFET
Drain-to-Source Voltage (VDS) — 20 V
N-Channel Continuous Drain Current (ID) — 950 mA
P-Channel Continuous Drain Current (ID) — 530 mA (negative polarity)
Total Power Dissipation (Ptot) — 500 mW
Package Type — PG-SOT363-6-1 (SOT-363, 6-pin)
Gambaran Suhu Operasi — -55 °C to +150 °C (junction)
Polarity — N-channel + P-channel
Channel Mode — Enhancement
Aras MSL — 1

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga