BSR802NL6327HTSA1 vs BSP316PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSR802NL6327HTSA1 disebabkan oleh Infineon dan BSP316PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSR802NL6327HTSA1 BSP316PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSR802NL6327HTSA1 —
Technology OptiMOS 2 (N-Channel Trench MOSFET) SIPMOS (P-channel MOSFET)
Channel Type N-Channel —
Drain-Source Voltage (VDS) max 20 V —
Continuous Drain Current (ID) max 3.7 A (Ta=25C) —
Power Dissipation (PD) max 500 mW (Ta=25C) —
On-Resistance (RDS(on)) typ 23 mOhm @ VGS=4.5 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical]
Kemasan PG-SC59-3 (SC-59 / SOT-346) PG-SOT223-4 (TO-261-4)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Hubungan Operasi -55C to +150C —
Qualification Automotive —
Status RoHS Compliant Compliant
Kiraan Pin 3 —
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TA=25C — -680 mA
Total Power Dissipation (Ptot) at TA=25C — 1.8 W
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Gambaran Suhu Operasi — -55 C to +150 C (junction)
Bilangan Pin — 3 + thermal tab
Channel Mode — Enhancement
Aras MSL — 1
Packaging — Tape & Reel (H6327 suffix)

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