BSR802NL6327HTSA1 vs BSP316PH6327XTSA1 比較
詳細並排比較 BSR802NL6327HTSA1 由 Infineon 與 BSP316PH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSR802NL6327HTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSR802NL6327HTSA1 | — |
| Technology | OptiMOS 2 (N-Channel Trench MOSFET) | SIPMOS (P-channel MOSFET) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 20 V | — |
| Continuous Drain Current (ID) max | 3.7 A (Ta=25C) | — |
| Power Dissipation (PD) max | 500 mW (Ta=25C) | — |
| On-Resistance (RDS(on)) typ | 23 mOhm @ VGS=4.5 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| 封裝 | PG-SC59-3 (SC-59 / SOT-346) | PG-SOT223-4 (TO-261-4) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作接面溫度 | -55C to +150C | — |
| Qualification | Automotive | — |
| RoHS 狀態 | Compliant | Compliant |
| 腳位數 | 3 | — |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TA=25C | — | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| 工作溫度範圍 | — | -55 C to +150 C (junction) |
| 腳位數 | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| MSL 等級 | — | 1 |
| Packaging | — | Tape & Reel (H6327 suffix) |