BSS123NH6327XTSA1 vs 2N7002LT1G Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS123NH6327XTSA1 disebabkan oleh Infineon dan 2N7002LT1G disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS123NH6327XTSA1 2N7002LT1G
Merek Infineon onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies onsemi (ON Semiconductor)
Part Number BSS123NH6327XTSA1 —
Part Status Active —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 190 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) Max 6 Ω @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and max VGS(th)] —
Gate-Source Voltage Max (VGS) ±20 V —
Kemasan PG-SOT23 (SOT-23-3) SOT-23-3 (TO-236)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +150 °C (junction) [DATA_NEEDED: operating temperature range]
Qualification AEC-Q101 (automotive) —
RoHS Compliance Yes (Pb-free lead plating) —
Aras MSL 1 (per JEDEC J-STD-020) —
Polarity — N-Channel
Channel Mode — Enhancement Mode
Drain-Source Voltage VDSS — 60 V
Continuous Drain Current ID — 115 mA (Tc)
Power Dissipation PD — 225 mW (Ta)
Maximum RDS(on) — 7.5 ohm @ VGS = 5 V
Configuration — Single FET
Bilangan Pin — 3
Kategori — Small Signal MOSFET
Technology — MOSFET
Lead Finish — [DATA_NEEDED: lead finish/plating]
Packaging — [DATA_NEEDED: packaging type]

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