BSS123NH6327XTSA1 vs 2N7002LT1G Perbandingan

Perbandingan bersamaan detil BSS123NH6327XTSA1 dari Infineon dan 2N7002LT1G dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS123NH6327XTSA1 2N7002LT1G
Merek Infineon onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies onsemi (ON Semiconductor)
Part Number BSS123NH6327XTSA1 —
Part Status Active —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 190 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) Max 6 Ω @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and max VGS(th)] —
Gate-Source Voltage Max (VGS) ±20 V —
Paket PG-SOT23 (SOT-23-3) SOT-23-3 (TO-236)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +150 °C (junction) [DATA_NEEDED: operating temperature range]
Qualification AEC-Q101 (automotive) —
RoHS Compliance Yes (Pb-free lead plating) —
Level MSL 1 (per JEDEC J-STD-020) —
Polarity — N-Channel
Channel Mode — Enhancement Mode
Drain-Source Voltage VDSS — 60 V
Continuous Drain Current ID — 115 mA (Tc)
Power Dissipation PD — 225 mW (Ta)
Maximum RDS(on) — 7.5 ohm @ VGS = 5 V
Configuration — Single FET
Jumlah Pin — 3
Kategori — Small Signal MOSFET
Technology — MOSFET
Lead Finish — [DATA_NEEDED: lead finish/plating]
Packaging — [DATA_NEEDED: packaging type]

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon