BSS138L vs BSS138NH6327XTSA2 比較
詳細並排比較 BSS138L 由 onsemi 與 BSS138NH6327XTSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS138L | BSS138NH6327XTSA2 |
|---|---|---|
| 品牌 | onsemi | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | N-Channel |
| Operating Mode | Enhancement Mode | Enhancement |
| VDS Drain-Source Voltage | 50 V | — |
| Continuous Drain Current (Ta) | 200 mA | 230 mA |
| Power Dissipation (Ta) | 350 mW | 360 mW |
| RDS(on) Max | 3.5 ohm | — |
| Technology | Trench MOSFET, high cell density | — |
| Gate Type | Logic Level | — |
| 封裝 | SOT-23-3 | PG-SOT-23 (3-pin) |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single FET | — |
| Switching Performance | Fast switching, rugged, reliable | — |
| 輸入電容 | [DATA_NEEDED: Ciss] | — |
| VGS Gate-Source Voltage | [DATA_NEEDED: VGS max rating] | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Tj max and operating range] |
| Packaging | 3000 units per reel (tape and reel) | Tape and Reel |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 60 V |
| R_DS(on) max @ V_GS=10V | — | 3.5 ohm |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: typical V_GS(th) value] |
| Gate-Source Voltage V_GS max | — | ±20 V |
| dv/dt Rated | — | Yes |
| 無鹵素 | — | Yes (per IEC 61249-2-21) |
| RoHS Compliance | — | Compliant |
| AEC-Q101 Qualification | — | Qualified |
| Lead Plating | — | Pb-free |
| Marking Code | — | [DATA_NEEDED: top-side marking code] |