BSZ068N06NSATMA1 vs BSC076N04NDATMA1 比較
詳細並排比較 BSZ068N06NSATMA1 由 Infineon 與 BSC076N04NDATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ068N06NSATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | 2x N-Channel MOSFET array |
| Technology | OptiMOS 5 (trench-gate) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 40 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID at Ta] | — |
| On-Resistance RDS(on) max | 6.8 mΩ @ VGS=10 V | 7.6 mOhm |
| Power Dissipation (Ta) | 2.1 W | 2.3 W |
| Power Dissipation (Tc) | 46 W | 65 W |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | — |
| 工作溫度範圍 | -55 °C to +150 °C | — |
| 封裝 | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | MSL1 | — |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| 工作接面溫度 | — | -55 C to +175 C |
| 封裝 / 外殼 | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |