BSZ068N06NSATMA1 vs BSC076N04NDATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ068N06NSATMA1 sa pamamagitan ng Infineon at BSC076N04NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC076N04NDATMA1 BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSZ068N06NSATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel 2x N-Channel MOSFET array
Technology OptiMOS 5 (trench-gate) Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tc) 40 A —
Continuous Drain Current (ID, Ta) [DATA_NEEDED: ID at Ta] —
On-Resistance RDS(on) max 6.8 mΩ @ VGS=10 V 7.6 mOhm
Power Dissipation (Ta) 2.1 W 2.3 W
Power Dissipation (Tc) 46 W 65 W
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg typ] —
Hanay ng Temperature na Operasyon -55 °C to +150 °C —
Packhaging PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) —
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL1 —
RoHS / Halogen-Free RoHS compliant, halogen-free —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Temperature ng Junction na Operasyon — -55 C to +175 C
Packhaging / Kaso — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)

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