BSZ068N06NSATMA1 vs BSC076N04NDATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ068N06NSATMA1 disebabkan oleh Infineon dan BSC076N04NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSZ068N06NSATMA1 - 60V, 6.8mΩ N-Channel OptiMOS 5 MOSFET | Infineon
BSZ068N06NSATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSZ068N06NSATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | 2x N-Channel MOSFET array |
| Technology | OptiMOS 5 (trench-gate) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 40 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID at Ta] | — |
| On-Resistance RDS(on) max | 6.8 mΩ @ VGS=10 V | 7.6 mOhm |
| Power Dissipation (Ta) | 2.1 W | 2.3 W |
| Power Dissipation (Tc) | 46 W | 65 W |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C | — |
| Kemasan | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL1 | — |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Kemasan / Case | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |