CSD15571Q2 vs CSD13302W Comparison

Detailed side-by-side comparison of CSD15571Q2 by Texas Instruments and CSD13302W by Texas Instruments. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Texas Instruments
CSD15571Q2 CSD15571Q2 - 20V N-Channel NexFET MOSFET | Texas Instruments

CSD15571Q2 - 20V N-Channel NexFET MOSFET | Texas Instruments

CSD15571Q2 ✓ Active
Texas Instruments
CSD13302W CSD13302W - 12V N-Channel NexFET MOSFET | Texas Instruments

CSD13302W - 12V N-Channel NexFET MOSFET | Texas Instruments

CSD13302W ✓ Active

Specification Comparison

Parameter CSD15571Q2 CSD13302W
Brand Texas Instruments Texas Instruments
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.19 $0.19
Drain-Source Voltage (Vds) 20 V —
Continuous Drain Current (Id) 22 A (Ta=25°C) —
On-Resistance (Rds(on)) 19.2 mΩ —
Power Dissipation (Pd) 2.5 W (Ta=25°C) —
Gate Threshold Voltage (Vgs(th)) 1.1 V (typical) —
Gate Charge (Qg) [DATA_NEEDED: Gate Charge] 4.1 nC at VGS=4.5V
Package WSON (DQK) 6-pin, 2 mm x 2 mm 4-DSBGA (1x1)
Mounting Type Surface Mount Surface Mount
Polarity N-Channel N-Channel
Number of Channels 1 —
Technology NexFET NexFET
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Operating Temperature Range [DATA_NEEDED: Operating Temperature Range] -55°C to +150°C
Maximum Power Dissipation 2.5 W —
Drain-Source Voltage (VDS) — 12 V
Continuous Drain Current (ID) — 1.6 A (Ta=25°C)
On-Resistance (RDS(on)) — 14.6 mΩ (typ) at VGS=4.5V
Threshold Voltage (VGS(th)) — 0.9 V
Maximum Gate-Source Voltage — ±8 V
Power Dissipation (PD) — 1.8 W (Ta=25°C)
Height — 0.4 mm

Datasheets & Resources

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