CSD15571Q2 vs CSD13302W Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci CSD15571Q2 disebabkan oleh Texas Instruments dan CSD13302W disebabkan oleh Texas Instruments. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Texas Instruments
CSD15571Q2 CSD15571Q2 - 20V N-Channel NexFET MOSFET | Texas Instruments

CSD15571Q2 - 20V N-Channel NexFET MOSFET | Texas Instruments

CSD15571Q2 ✓ Aktif
Texas Instruments
CSD13302W CSD13302W - 12V N-Channel NexFET MOSFET | Texas Instruments

CSD13302W - 12V N-Channel NexFET MOSFET | Texas Instruments

CSD13302W ✓ Aktif

Pengandingan Spesifikasi

Parametr CSD15571Q2 CSD13302W
Merek Texas Instruments Texas Instruments
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (Vds) 20 V —
Continuous Drain Current (Id) 22 A (Ta=25°C) —
On-Resistance (Rds(on)) 19.2 mΩ —
Power Dissipation (Pd) 2.5 W (Ta=25°C) —
Gate Threshold Voltage (Vgs(th)) 1.1 V (typical) —
Gate Charge (Qg) [DATA_NEEDED: Gate Charge] 4.1 nC at VGS=4.5V
Kemasan WSON (DQK) 6-pin, 2 mm x 2 mm 4-DSBGA (1x1)
Jenis Pemasangan Surface Mount Surface Mount
Polarity N-Channel N-Channel
Number of Channels 1 —
Technology NexFET NexFET
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Gambaran Suhu Operasi [DATA_NEEDED: Operating Temperature Range] -55°C to +150°C
Maximum Power Dissipation 2.5 W —
Drain-Source Voltage (VDS) — 12 V
Continuous Drain Current (ID) — 1.6 A (Ta=25°C)
On-Resistance (RDS(on)) — 14.6 mΩ (typ) at VGS=4.5V
Threshold Voltage (VGS(th)) — 0.9 V
Maximum Gate-Source Voltage — ±8 V
Power Dissipation (PD) — 1.8 W (Ta=25°C)
Height — 0.4 mm

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