CSD15571Q2 vs CSD13302W Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng CSD15571Q2 sa pamamagitan ng Texas Instruments at CSD13302W sa pamamagitan ng Texas Instruments. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Texas Instruments
CSD15571Q2 CSD15571Q2 - 20V N-Channel NexFET MOSFET | Texas Instruments

CSD15571Q2 - 20V N-Channel NexFET MOSFET | Texas Instruments

CSD15571Q2 ✓ Nakahanda
Texas Instruments
CSD13302W CSD13302W - 12V N-Channel NexFET MOSFET | Texas Instruments

CSD13302W - 12V N-Channel NexFET MOSFET | Texas Instruments

CSD13302W ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro CSD15571Q2 CSD13302W
Brand Texas Instruments Texas Instruments
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Drain-Source Voltage (Vds) 20 V —
Continuous Drain Current (Id) 22 A (Ta=25°C) —
On-Resistance (Rds(on)) 19.2 mΩ —
Power Dissipation (Pd) 2.5 W (Ta=25°C) —
Gate Threshold Voltage (Vgs(th)) 1.1 V (typical) —
Gate Charge (Qg) [DATA_NEEDED: Gate Charge] 4.1 nC at VGS=4.5V
Packhaging WSON (DQK) 6-pin, 2 mm x 2 mm 4-DSBGA (1x1)
Uri ng Pagpapasok Surface Mount Surface Mount
Polarity N-Channel N-Channel
Number of Channels 1 —
Technology NexFET NexFET
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Hanay ng Temperature na Operasyon [DATA_NEEDED: Operating Temperature Range] -55°C to +150°C
Maximum Power Dissipation 2.5 W —
Drain-Source Voltage (VDS) — 12 V
Continuous Drain Current (ID) — 1.6 A (Ta=25°C)
On-Resistance (RDS(on)) — 14.6 mΩ (typ) at VGS=4.5V
Threshold Voltage (VGS(th)) — 0.9 V
Maximum Gate-Source Voltage — ±8 V
Power Dissipation (PD) — 1.8 W (Ta=25°C)
Height — 0.4 mm

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