CSD18503Q5A vs CSD19534Q5A Comparison

Detailed side-by-side comparison of CSD18503Q5A by Texas Instruments and CSD19534Q5A by Texas Instruments. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Texas Instruments
CSD19534Q5A CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments

CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments

CSD19534Q5A ✓ Active

Specification Comparison

Parameter CSD18503Q5A CSD19534Q5A
Brand Texas Instruments Texas Instruments
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.85 $0.62
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V —
On-Resistance (RDS(on)) 4.3 mOhm (3.4 mOhm typical) —
Continuous Drain Current (Ta) 19 A —
Continuous Drain Current (Tc) 100 A —
Power Dissipation (Ta) 3.1 W 3.2 W
Power Dissipation (Tc) 120 W 63 W
Technology NexFET NexFET (Power MOSFET)
Package 8-VSONP (DQJ), 5 mm x 6 mm 8-VSONP (5x6 mm) with exposed pad
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55C to +150C —
Configuration Single —
Gate Charge [DATA_NEEDED: Qg] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Number of Pins 8 —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 44 A
On-Resistance RDS(on) — 12.6 mΩ (typ per datasheet description)
Operating Temperature Range — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at VGS=10V]
MSL Level — 1-260C-UNLIM
Pin Count — 8

Datasheets & Resources

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