CSD18503Q5A vs CSD19534Q5A Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci CSD18503Q5A disebabkan oleh Texas Instruments dan CSD19534Q5A disebabkan oleh Texas Instruments. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Texas Instruments
CSD19534Q5A CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments

CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments

CSD19534Q5A ✓ Aktif

Pengandingan Spesifikasi

Parametr CSD18503Q5A CSD19534Q5A
Merek Texas Instruments Texas Instruments
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V —
On-Resistance (RDS(on)) 4.3 mOhm (3.4 mOhm typical) —
Continuous Drain Current (Ta) 19 A —
Continuous Drain Current (Tc) 100 A —
Power Dissipation (Ta) 3.1 W 3.2 W
Power Dissipation (Tc) 120 W 63 W
Technology NexFET NexFET (Power MOSFET)
Kemasan 8-VSONP (DQJ), 5 mm x 6 mm 8-VSONP (5x6 mm) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Suhu Hubungan Operasi -55C to +150C —
Configuration Single —
Gate Charge [DATA_NEEDED: Qg] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Bilangan Pin 8 —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 44 A
On-Resistance RDS(on) — 12.6 mΩ (typ per datasheet description)
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at VGS=10V]
Aras MSL — 1-260C-UNLIM
Kiraan Pin — 8

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