CSD18503Q5A vs CSD19534Q5A Perbandingan

Perbandingan bersamaan detil CSD18503Q5A dari Texas Instruments dan CSD19534Q5A dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Texas Instruments
CSD19534Q5A CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments

CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments

CSD19534Q5A ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum CSD18503Q5A CSD19534Q5A
Merek Texas Instruments Texas Instruments
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V —
On-Resistance (RDS(on)) 4.3 mOhm (3.4 mOhm typical) —
Continuous Drain Current (Ta) 19 A —
Continuous Drain Current (Tc) 100 A —
Power Dissipation (Ta) 3.1 W 3.2 W
Power Dissipation (Tc) 120 W 63 W
Technology NexFET NexFET (Power MOSFET)
Paket 8-VSONP (DQJ), 5 mm x 6 mm 8-VSONP (5x6 mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55C to +150C —
Configuration Single —
Gate Charge [DATA_NEEDED: Qg] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Jumlah Pin 8 —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 44 A
On-Resistance RDS(on) — 12.6 mΩ (typ per datasheet description)
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at VGS=10V]
Level MSL — 1-260C-UNLIM
Jumlah Pin — 8

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon