CSD18503Q5A vs CSD19534Q5A 比較

詳細並排比較 CSD18503Q5A 由 Texas Instruments 與 CSD19534Q5A 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
CSD18503Q5A CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments

CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments

CSD18503Q5A ✓ 啟用中
Texas Instruments
CSD19534Q5A CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments

CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments

CSD19534Q5A ✓ 啟用中

規格比較

參數 CSD18503Q5A CSD19534Q5A
品牌 Texas Instruments Texas Instruments
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V —
On-Resistance (RDS(on)) 4.3 mOhm (3.4 mOhm typical) —
Continuous Drain Current (Ta) 19 A —
Continuous Drain Current (Tc) 100 A —
Power Dissipation (Ta) 3.1 W 3.2 W
Power Dissipation (Tc) 120 W 63 W
Technology NexFET NexFET (Power MOSFET)
封裝 8-VSONP (DQJ), 5 mm x 6 mm 8-VSONP (5x6 mm) with exposed pad
安裝類型 Surface Mount Surface Mount
工作接面溫度 -55C to +150C —
Configuration Single —
Gate Charge [DATA_NEEDED: Qg] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant
腳位數 8 —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 44 A
On-Resistance RDS(on) — 12.6 mΩ (typ per datasheet description)
工作溫度範圍 — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at VGS=10V]
MSL 等級 — 1-260C-UNLIM
腳位數 — 8

資料表與資源

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