FDD8880 vs FDD8896 比較

詳細並排比較 FDD8880 由 onsemi 與 FDD8896 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

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FDD8880 FDD8880 - 30V 58A N-Ch PowerTrench MOSFET | onsemi

FDD8880 - 30V 58A N-Ch PowerTrench MOSFET | onsemi

FDD8880 ⚠ 最後購買機會

規格比較

參數 FDD8880 FDD8896
品牌 onsemi onsemi
類別 MOSFETs MOSFETs
生命週期狀態 最後購買 停產終止
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) 13 A (Ta), 58 A (Tc) —
On-Resistance (rDS(on)) 9 mOhm max —
Total Power Dissipation (PD) 55 W (Tc) —
Technology PowerTrench PowerTrench (trench MOSFET)
封裝 TO-252AA (DPAK) TO-252 (DPAK), 3-Pin (2+Tab)
安裝類型 Surface Mount Surface Mount
Configuration Single FET Single FET
Gate Charge (Qg) [DATA_NEEDED: gate charge] [DATA_NEEDED: Gate Charge]
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max] —
Threshold Voltage (VGS th) [DATA_NEEDED: threshold voltage] —
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
Thermal Resistance (RthJA) [DATA_NEEDED: thermal resistance] —
RoHS 狀態 [DATA_NEEDED: RoHS status] —
生命週期狀態 Last Shipments —
電晶體類型 — N-Channel PowerTrench MOSFET
Drain-Source Voltage (Vdss) — 30 V
Continuous Drain Current (Id) at Ta — 17 A
Continuous Drain Current (Id) at Tc — 94 A
Drain-Source On-Resistance (rDS(ON)) — 5.7 mOhm
Power Dissipation (Pd) at Tc — 80 W
Gate-Source Voltage (Vgs) Max — [DATA_NEEDED: Vgs Max]
腳位數 — 3
Typical Application — DC/DC converters, synchronous PWM controllers
Manufacturer — Fairchild Semiconductor (now onsemi)
Packing — Tape & Reel (T/R)

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