H5AN8G6NAFR-UHC vs K4A8G085WB-BIWE Comparison
Detailed side-by-side comparison of H5AN8G6NAFR-UHC by SK hynix and K4A8G085WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NAFR-UHC | K4A8G085WB-BIWE |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.74 | $6.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Supply Voltage | 1.2 V | 1.2 V |
| Data Rate | 2400 MT/s | 3200 Mbps |
| Package | FBGA-96 | 78-FBGA |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| RoHS Compliant | Yes | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CL value] |
| Burst Length | 8, 4 (with burst chop) | — |
| Refresh | Auto self-refresh | Auto-refresh, self-refresh |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Mounting Type | — | Surface Mount |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| RoHS Status | — | Compliant |