H5AN8G6NDJR-XNC vs AS4C512M16D4-75BIN Comparison
Detailed side-by-side comparison of H5AN8G6NDJR-XNC by SK hynix and AS4C512M16D4-75BIN by Alliance Memory. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ ActiveSpecification Comparison
| Parameter | H5AN8G6NDJR-XNC | AS4C512M16D4-75BIN |
|---|---|---|
| Brand | SK hynix | Alliance Memory |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $55.68 | $8.99 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | 8 Gbit |
| Memory Organization | 512M x16 | 512M x 16 |
| Data Rate | 3200 Mbps | 2666 Mbps |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | — |
| Package | FBGA-96 (13x7.5 mm) | 96-FBGA (7.5x13) |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Clock Frequency | — | 1.333 GHz |
| Access Time | — | 18 ns |
| Write Cycle Time | — | 15 ns |
| Supply Voltage | — | 1.2 V |
| Operating Temperature | — | -40°C to +95°C |
| Mounting Type | — | Surface Mount |
| Interface | — | POD |
| Number of Pins | — | 96 |
| RoHS Status | — | Compliant |
| Features | — | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration |