H5AN8G6NDJR-XNC vs AS4C512M16D4-75BIN 对比
详细并排对比 H5AN8G6NDJR-XNC 出自 SK hynix 和 AS4C512M16D4-75BIN 出自 Alliance Memory。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Alliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ 量产中规格对比
| 参数 | H5AN8G6NDJR-XNC | AS4C512M16D4-75BIN |
|---|---|---|
| 品牌 | SK hynix | Alliance Memory |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $55.68 | $8.99 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gb | 8 Gbit |
| Memory Organization | 512M x16 | 512M x 16 |
| 数据速率 | 3200 Mbps | 2666 Mbps |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | — |
| 封装 | FBGA-96 (13x7.5 mm) | 96-FBGA (7.5x13) |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Clock Frequency | — | 1.333 GHz |
| Access Time | — | 18 ns |
| Write Cycle Time | — | 15 ns |
| 电源电压 | — | 1.2 V |
| 工作温度 | — | -40°C to +95°C |
| 安装类型 | — | Surface Mount |
| 接口 | — | POD |
| 引脚数 | — | 96 |
| RoHS 状态 | — | Compliant |
| 特性 | — | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration |