H5AN8G8NCJR-RDC vs K4A8G085WC-BCRC Comparison
Detailed side-by-side comparison of H5AN8G8NCJR-RDC by SK hynix and K4A8G085WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G8NCJR-RDC | K4A8G085WC-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.70 | $4.30 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb (1 GB) | 8 Gbit |
| Organization | x8 | 1G x 8 |
| Data Rate | up to 2666 Mbps | 2400 Mbps (DDR4-2400) |
| Supply Voltage | 1.2 V (VDD) | 1.2 V |
| Interface | DDR4 (JEDEC standard) | — |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Burst Length | BL8 | — |
| Package | 78-ball FBGA | 78-ball FBGA (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range for -RDC suffix] | 0C to +95C |
| CAS Latency | [DATA_NEEDED: CAS latency for -RDC speed grade] | — |
| Generation | C-die family (NCJR) | — |
| Lead Free | Yes | — |
| Halogen Free | Yes | — |
| RoHS Status | Compliant | Compliant |
| Terminal Pitch | — | 0.8 mm |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| Data Mask Function | — | Yes |
| Refresh | — | Auto/Self refresh |