H5AN8G8NCJR-RDC vs K4A8G085WC-BCRC 对比
详细并排对比 H5AN8G8NCJR-RDC 出自 SK hynix 和 K4A8G085WC-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G8NCJR-RDC | K4A8G085WC-BCRC |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.70 | $4.30 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb (1 GB) | 8 Gbit |
| 存储组织 | x8 | 1G x 8 |
| 数据速率 | up to 2666 Mbps | 2400 Mbps (DDR4-2400) |
| 电源电压 | 1.2 V (VDD) | 1.2 V |
| 接口 | DDR4 (JEDEC standard) | — |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Burst Length | BL8 | — |
| 封装 | 78-ball FBGA | 78-ball FBGA (TFBGA) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range for -RDC suffix] | 0C to +95C |
| CAS 延迟 | [DATA_NEEDED: CAS latency for -RDC speed grade] | — |
| Generation | C-die family (NCJR) | — |
| Lead Free | Yes | — |
| 无卤 | Yes | — |
| RoHS 状态 | Compliant | Compliant |
| Terminal Pitch | — | 0.8 mm |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| Data Mask Function | — | Yes |
| Refresh | — | Auto/Self refresh |