H5TC4G63AFR-PBI vs MT41K256M16RE-125:D Comparison

Detailed side-by-side comparison of H5TC4G63AFR-PBI by SK hynix and MT41K256M16RE-125:D by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5TC4G63AFR-PBI

H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI Obsolete
Micron Technology
MT41K256M16RE-125:D

MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron

MT41K256M16RE-125:D βœ“ Active

Specification Comparison

Parameter H5TC4G63AFR-PBI MT41K256M16RE-125:D
Brand SK hynix Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Obsolete Active
Stock Status In Stock In Stock
Unit Price (USD) $6.50 $4.19
Memory Type DDR3L SDRAM DDR3L SDRAM
Organization 256M x 16 256M x 16
Total Memory Size 4 Gb β€”
Data Rate DDR3-1600 (PC3L-12800) 1600 MT/s
Supply Voltage 1.35 V 1.35 V
Number of Banks 8 β€”
Burst Length 8 (BL8) 8, 4
CAS Latency Programmable 11
On-Die Termination (ODT) Yes β€”
Refresh Period 7.8 us at 85Β°C β€”
Operating Temperature Range -40Β°C to +95Β°C β€”
Package 96-ball FBGA (TFBGA, BGA96, 9x16, 32) FBGA-96 (9x14 mm)
Mounting Type Surface Mount β€”
Number of Terminals 96 β€”
RoHS Status Compliant β€”
Density β€” 4 Gb
Operating Temperature β€” 0C to +95C (TC)
RoHS β€” Compliant
Lead-Free β€” Yes
On-Die Termination β€” Yes
Auto-Refresh β€” Yes
Self-Refresh β€” Yes
Ball Pitch β€” 0.8 mm

Datasheets & Resources

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