H5TC4G63AFR-PBI vs NT5CC256M16ER-EKI Comparison

Detailed side-by-side comparison of H5TC4G63AFR-PBI by SK hynix and NT5CC256M16ER-EKI by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5TC4G63AFR-PBI

H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI Obsolete
Nanya Technology
NT5CC256M16ER-EKI NT5CC256M16ER-EKI - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CC256M16ER-EKI - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CC256M16ER-EKI βœ“ Active

Specification Comparison

Parameter H5TC4G63AFR-PBI NT5CC256M16ER-EKI
Brand SK hynix Nanya Technology
Category Memory ICs Memory ICs
Lifecycle Status Obsolete Active
Stock Status In Stock In Stock
Unit Price (USD) $6.50 $16.70
Memory Type DDR3L SDRAM DDR3L SDRAM
Organization 256M x 16 256M x 16
Total Memory Size 4 Gb β€”
Data Rate DDR3-1600 (PC3L-12800) 933 MHz (DDR3L-1866)
Supply Voltage 1.35 V 1.35 V (1.5 V compatible)
Number of Banks 8 β€”
Burst Length 8 (BL8) β€”
CAS Latency Programmable β€”
On-Die Termination (ODT) Yes β€”
Refresh Period 7.8 us at 85Β°C β€”
Operating Temperature Range -40Β°C to +95Β°C β€”
Package 96-ball FBGA (TFBGA, BGA96, 9x16, 32) 96-ball TFBGA
Mounting Type Surface Mount Surface Mount
Number of Terminals 96 β€”
RoHS Status Compliant β€”
Density β€” 4 Gbit
Operating Temperature β€” -40Β°C to +95Β°C
Auto Self-Refresh β€” Yes
Auto Precharge β€” Yes
Asynchronous Reset β€” Yes
Write Leveling β€” Yes
Dynamic On-Chip Termination β€” Yes
ZQ Calibration β€” Yes
RoHS β€” Compliant

Datasheets & Resources

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