H5TC4G63CFR-PBL vs K4B4G1646D-BCK00 Comparison
Detailed side-by-side comparison of H5TC4G63CFR-PBL by SK hynix and K4B4G1646D-BCK00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00 ✓ ActiveSpecification Comparison
| Parameter | H5TC4G63CFR-PBL | K4B4G1646D-BCK00 |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gb (256M x 16) | — |
| Supply Voltage | 1.35 V | 1.35V (1.283V to 1.45V) |
| Data Rate | 1600 Mbps (PC3L-12800) | 1600 Mbps/pin |
| Package | 96-ball FBGA (TFBGA) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Number of Terminals | 96 | — |
| Package Shape | RECTANGULAR | — |
| Terminal Form | BALL | — |
| Burst Length | 8 | 8, 4 (with burst chop) |
| CAS Latency | 11, 12, 13 | 11 (at 1600 Mbps) |
| Number of Banks | 8 | 8 |
| Refresh Period | 7.8 us at 85C | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| Density | — | 4 Gb |
| Organization | — | 256M x 16 |
| Speed Grade | — | DDR3-1600 (800 MHz) |
| I/O Voltage | — | 1.35V |
| Operating Temperature | — | 0°C to 95°C (Tcase) |