IAUC100N10S5N040ATMA1 vs IRLR3410TRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC100N10S5N040ATMA1 sa pamamagitan ng Infineon at IRLR3410TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IAUC100N10S5N040ATMA1 | IRLR3410TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-5 | HEXFET (5th generation) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | — |
| Pulsed Drain Current (IDM) | 400 A | 60 A |
| RDS(on) max @ VGS=10V | 4 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | 22.7 nC |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | — |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | — |
| Packhaging | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | TO-252AA (DPAK), surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (tape and reel) |
| Level ng MSL | MSL1 (up to 260C peak reflow) | 1 |
| Automotive Qualification | AEC-Q100 qualified | — |
| Avalanche Rating | 100% Avalanche tested | — |
| AOI Compatibility | Feasible for Automatic Optical Inspection | — |
| Tindminan RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLR3410TRLPBF |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 105 mOhm |
| On-Resistance RDS(on) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) @ VGS=5V] |
| Gate-Source Threshold VGS(th) typ | — | 2.0 V |
| Gate Drive Level | — | Logic level (5V capable) |
| Power Dissipation (PD) at TC=25C | — | 79 W |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| RoHS Compliance | — | Compliant (Pb-free) |
| Avalanche Rated | — | Yes (UIS tested) |