IAUC100N10S5N040ATMA1 vs IRLR3410TRLPBF Perbandingan

Perbandingan bersamaan detil IAUC100N10S5N040ATMA1 dari Infineon dan IRLR3410TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUC100N10S5N040ATMA1 IRLR3410TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-5 HEXFET (5th generation) N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ TC=25C 100 A (package-limited) —
Pulsed Drain Current (IDM) 400 A 60 A
RDS(on) max @ VGS=10V 4 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] 22.7 nC
Maximum Power Dissipation (PD) 167 W @ TC=25C —
Thermal Resistance, Junction-to-Case (RthJC) 0.9 K/W —
Rentang Suhu Kerja -55C to +175C (junction) —
Paket PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount TO-252AA (DPAK), surface mount
Tipe Mounting Surface Mount Surface Mount (tape and reel)
Level MSL MSL1 (up to 260C peak reflow) 1
Automotive Qualification AEC-Q100 qualified —
Avalanche Rating 100% Avalanche tested —
AOI Compatibility Feasible for Automatic Optical Inspection —
Status RoHS Compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLR3410TRLPBF
Continuous Drain Current (ID) at TC=25C — 17 A
On-Resistance RDS(on) max @ VGS=10V — 105 mOhm
On-Resistance RDS(on) max @ VGS=5V — [DATA_NEEDED: RDS(on) @ VGS=5V]
Gate-Source Threshold VGS(th) typ — 2.0 V
Gate Drive Level — Logic level (5V capable)
Power Dissipation (PD) at TC=25C — 79 W
Suhu Hubung Kerja — -55C to +175C
RoHS Compliance — Compliant (Pb-free)
Avalanche Rated — Yes (UIS tested)

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IAUC100N10S5N040ATMA1

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