IAUC100N10S5N040ATMA1 vs IRLR3410TRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N10S5N040ATMA1 disebabkan oleh Infineon dan IRLR3410TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUC100N10S5N040ATMA1 IRLR3410TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-5 HEXFET (5th generation) N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ TC=25C 100 A (package-limited) —
Pulsed Drain Current (IDM) 400 A 60 A
RDS(on) max @ VGS=10V 4 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] 22.7 nC
Maximum Power Dissipation (PD) 167 W @ TC=25C —
Thermal Resistance, Junction-to-Case (RthJC) 0.9 K/W —
Gambaran Suhu Operasi -55C to +175C (junction) —
Kemasan PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount TO-252AA (DPAK), surface mount
Jenis Pemasangan Surface Mount Surface Mount (tape and reel)
Aras MSL MSL1 (up to 260C peak reflow) 1
Automotive Qualification AEC-Q100 qualified —
Avalanche Rating 100% Avalanche tested —
AOI Compatibility Feasible for Automatic Optical Inspection —
Status RoHS Compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLR3410TRLPBF
Continuous Drain Current (ID) at TC=25C — 17 A
On-Resistance RDS(on) max @ VGS=10V — 105 mOhm
On-Resistance RDS(on) max @ VGS=5V — [DATA_NEEDED: RDS(on) @ VGS=5V]
Gate-Source Threshold VGS(th) typ — 2.0 V
Gate Drive Level — Logic level (5V capable)
Power Dissipation (PD) at TC=25C — 79 W
Suhu Hubungan Operasi — -55C to +175C
RoHS Compliance — Compliant (Pb-free)
Avalanche Rated — Yes (UIS tested)

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