IAUC100N10S5N040ATMA1 vs IRLR3410TRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N10S5N040ATMA1 disebabkan oleh Infineon dan IRLR3410TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC100N10S5N040ATMA1 | IRLR3410TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-5 | HEXFET (5th generation) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | — |
| Pulsed Drain Current (IDM) | 400 A | 60 A |
| RDS(on) max @ VGS=10V | 4 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | 22.7 nC |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | — |
| Gambaran Suhu Operasi | -55C to +175C (junction) | — |
| Kemasan | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount (tape and reel) |
| Aras MSL | MSL1 (up to 260C peak reflow) | 1 |
| Automotive Qualification | AEC-Q100 qualified | — |
| Avalanche Rating | 100% Avalanche tested | — |
| AOI Compatibility | Feasible for Automatic Optical Inspection | — |
| Status RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLR3410TRLPBF |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 105 mOhm |
| On-Resistance RDS(on) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) @ VGS=5V] |
| Gate-Source Threshold VGS(th) typ | — | 2.0 V |
| Gate Drive Level | — | Logic level (5V capable) |
| Power Dissipation (PD) at TC=25C | — | 79 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| RoHS Compliance | — | Compliant (Pb-free) |
| Avalanche Rated | — | Yes (UIS tested) |