IAUC120N06S5L011ATMA1 vs IPB020N10N5LFATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC120N06S5L011ATMA1 disebabkan oleh Infineon dan IPB020N10N5LFATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUC120N06S5L011ATMA1 IPB020N10N5LFATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 60 V (S5 generation) OptiMOS 5 Linear FET
Polarity / Channel Type N-Channel —
Drain-Source Voltage (V_DS) 60 V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) 310 A (Tj), 120 A marketing —
R_DS(on) max [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] —
Power Dissipation (P_D) 188 W at T_C = 25 °C —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) PG-TO263-3 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) 1
Avalanche Energy Rated Yes (EAS) —
Technology — N-Channel Enhancement-Mode Power MOSFET
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (Tc) — 176 A
Silicon-Limited Drain Current — 289 A
Package-Limited Drain Current — 120 A
Pulsed Drain Current (VDS=56V, tp=10ms) — 10.2 A
On-State Resistance RDS(on) max — 2.0 mΩ
Total Power Dissipation (Tc) — 313 W
Gambaran Suhu Operasi — -55 °C to +175 °C
Gate Threshold Voltage VGS(th) typ — 2.5 V
Marking Code — 020N10LF

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