IAUCN10S5L280DATMA1 vs IAUCN08S7L110ATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S5L280DATMA1 by Infineon and IAUCN08S7L110ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUCN10S5L280DATMA1 | IAUCN08S7L110ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Configuration | Dual N-Channel MOSFET Array | Single |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tj | 23 A | — |
| Power Dissipation (Pd) at Tc | 38 W | — |
| Package | PG-TDSON-8-61 (SSO8) | PG-TDSON-8-34 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (AEC-Q101, IAU prefix) | Yes (AEC-Q101 expected per family) |
| Technology | OptiMOS 5 Trench MOSFET | OptiMOS™ (Trench) |
| Operating Temperature Range | -55C to +175C (junction) | — |
| Pin Count | 8 | — |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Packing | Tape & Reel (T&R) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | — | 50 A |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | — | 58 W |
| R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) | — | 11 mΩ |
| Gate-Source Voltage (V<sub>GS</sub>) max | — | [DATA_NEEDED: V_GS_max] |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: V_GS_th] |
| Total Gate Charge (Q<sub>G</sub>) | — | [DATA_NEEDED: Q_G_total] |
| Operating Junction Temperature | — | -55 °C to +175 °C |
| Polarity | — | Single N-Channel |