IAUCN10S5L280DATMA1 vs IAUCN08S7L110ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN10S5L280DATMA1 sa pamamagitan ng Infineon at IAUCN08S7L110ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUCN10S5L280DATMA1 IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 ✓ Nakahanda
Infineon
IAUCN08S7L110ATMA1 IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUCN10S5L280DATMA1 IAUCN08S7L110ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Configuration Dual N-Channel MOSFET Array Single
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tj 23 A —
Power Dissipation (Pd) at Tc 38 W —
Packhaging PG-TDSON-8-61 (SSO8) PG-TDSON-8-34 (TDSON-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) Yes (AEC-Q101 expected per family)
Technology OptiMOS 5 Trench MOSFET OptiMOS™ (Trench)
Hanay ng Temperature na Operasyon -55C to +175C (junction) —
Bilang ng Pin 8 —
Level ng MSL 1 [DATA_NEEDED: MSL level]
Tindminan RoHS Compliant Compliant
Packing Tape & Reel (T&R) —
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) — 50 A
Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) — 58 W
R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) — 11 mΩ
Gate-Source Voltage (V<sub>GS</sub>) max — [DATA_NEEDED: V_GS_max]
Gate Threshold Voltage (V<sub>GS(th)</sub>) — [DATA_NEEDED: V_GS_th]
Total Gate Charge (Q<sub>G</sub>) — [DATA_NEEDED: Q_G_total]
Temperature ng Junction na Operasyon — -55 °C to +175 °C
Polarity — Single N-Channel

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