IGK120B041SXTSA1 vs IGLR70R200D2SXUMA1 Comparison
Detailed side-by-side comparison of IGK120B041SXTSA1 by Infineon and IGLR70R200D2SXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGK120B041SXTSA1
IGK120B041SXTSA1 - 40V GaN Bidirectional Switch | Infineon
IGK120B041SXTSA1 β ActiveInfineon
IGLR70R200D2SXUMA1
IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΞ© | Infineon
IGLR70R200D2SXUMA1 β ActiveSpecification Comparison
| Parameter | IGK120B041SXTSA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.68 | $1.24 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN Bidirectional Switch (BDS) | CoolGaN G5 |
| Technology | Gallium Nitride (GaN) on Silicon | GaN HEMT (E-mode, enhancement-mode) |
| Generation | G3 (medium-voltage) | β |
| Transistor Type | N-Channel, Monolithic Bidirectional | β |
| Drain-Source Voltage (VDS, max) | 40 V (symmetric, both polarities) | β |
| Continuous Drain Current (ID, Tc) | 30 A | 9.3 A |
| Power Dissipation (Tc) | 15 W | β |
| Power Dissipation (Ta) | 1.2 W | β |
| Total Gate Charge (Qg) | 4.4 nC | 1.26 nC |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: typical RDS(on) in mOhm] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) in V] | β |
| Operating Mode | Normally-off | β |
| Package | SG-UFWLB-16-2 (WLCSP 1.2 x 1.7 mm) | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Mounting Type | Surface Mount | β |
| Operating Temperature Range | [DATA_NEEDED: junction temperature range] | -40 Β°C to +150 Β°C |
| RoHS Status | Compliant (Pb-free) | β |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 700 V |
| Power Dissipation (PD, Tc) | β | 34 W |
| On-Resistance (RDS(on), max) | β | 200 mΞ© |
| Output Capacitance (Coss) | β | 91 pF |
| Reverse Transfer Capacitance (Crss) | β | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | β | 1.2 V |
| RoHS | β | Compliant |