IGK120B041SXTSA1 vs IGLR70R200D2SXUMA1 比較
詳細並排比較 IGK120B041SXTSA1 由 Infineon 與 IGLR70R200D2SXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IGK120B041SXTSA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN Bidirectional Switch (BDS) | CoolGaN G5 |
| Technology | Gallium Nitride (GaN) on Silicon | GaN HEMT (E-mode, enhancement-mode) |
| Generation | G3 (medium-voltage) | — |
| 電晶體類型 | N-Channel, Monolithic Bidirectional | — |
| Drain-Source Voltage (VDS, max) | 40 V (symmetric, both polarities) | — |
| Continuous Drain Current (ID, Tc) | 30 A | 9.3 A |
| Power Dissipation (Tc) | 15 W | — |
| Power Dissipation (Ta) | 1.2 W | — |
| Total Gate Charge (Qg) | 4.4 nC | 1.26 nC |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: typical RDS(on) in mOhm] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) in V] | — |
| Operating Mode | Normally-off | — |
| 封裝 | SG-UFWLB-16-2 (WLCSP 1.2 x 1.7 mm) | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| 安裝類型 | Surface Mount | — |
| 工作溫度範圍 | [DATA_NEEDED: junction temperature range] | -40 °C to +150 °C |
| RoHS 狀態 | Compliant (Pb-free) | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 700 V |
| Power Dissipation (PD, Tc) | — | 34 W |
| On-Resistance (RDS(on), max) | — | 200 mΩ |
| Output Capacitance (Coss) | — | 91 pF |
| Reverse Transfer Capacitance (Crss) | — | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.2 V |
| RoHS | — | Compliant |