IGK120B041SXTSA1 vs IGLR70R200D2SXUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IGK120B041SXTSA1 disebabkan oleh Infineon dan IGLR70R200D2SXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IGK120B041SXTSA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN Bidirectional Switch (BDS) | CoolGaN G5 |
| Technology | Gallium Nitride (GaN) on Silicon | GaN HEMT (E-mode, enhancement-mode) |
| Generation | G3 (medium-voltage) | — |
| Jenis Transistor | N-Channel, Monolithic Bidirectional | — |
| Drain-Source Voltage (VDS, max) | 40 V (symmetric, both polarities) | — |
| Continuous Drain Current (ID, Tc) | 30 A | 9.3 A |
| Power Dissipation (Tc) | 15 W | — |
| Power Dissipation (Ta) | 1.2 W | — |
| Total Gate Charge (Qg) | 4.4 nC | 1.26 nC |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: typical RDS(on) in mOhm] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) in V] | — |
| Operating Mode | Normally-off | — |
| Kemasan | SG-UFWLB-16-2 (WLCSP 1.2 x 1.7 mm) | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Jenis Pemasangan | Surface Mount | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: junction temperature range] | -40 °C to +150 °C |
| Status RoHS | Compliant (Pb-free) | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 700 V |
| Power Dissipation (PD, Tc) | — | 34 W |
| On-Resistance (RDS(on), max) | — | 200 mΩ |
| Output Capacitance (Coss) | — | 91 pF |
| Reverse Transfer Capacitance (Crss) | — | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.2 V |
| RoHS | — | Compliant |