IKD06N60RATMA1 vs IGB50N60TATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IKD06N60RATMA1 disebabkan oleh Infineon dan IGB50N60TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IKD06N60RATMA1 | IGB50N60TATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | IGBTs | IGBTs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | IGBT - Trench Field Stop with anti-parallel diode | — |
| Configuration | Single with built-in diode | Single |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous Collector Current (IC) at TC=25C | 12 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current] | — |
| Maximum Power Dissipation | 100 W | — |
| Gate-Emitter Voltage (VGE) | [DATA_NEEDED: VGE max rating] | — |
| Technology | TRENCHSTOP RC-IGBT3 (Reverse Conducting) | Trench + Field-Stop |
| VCE(sat) at IC=6A, VGE=15V | [DATA_NEEDED: VCE(sat) typical] | — |
| Diode Forward Voltage (VF) at IF=6A | [DATA_NEEDED: VF typical] | — |
| Gambaran Suhu Operasi | -40C to +150C (junction) | — |
| Kemasan | PG-TO252-3 (DPAK) | PG-TO263-3-2 (D2PAK / TO-263) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (2 + Tab) | — |
| Status RoHS | Compliant | Compliant |
| Automotive Qualified | Yes (per FindIC listing) | — |
| Switching Frequency Range (typical) | 4 kHz to 20 kHz (hard-switching) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | Trenchstop IGBT3 |
| Collector-Emitter Voltage (VCES) | — | 600 V |
| Continuous Collector Current (IC) at TC=25°C | — | 100 A |
| Continuous Collector Current (IC) at TC=100°C | — | 50 A |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | — | 150 A |
| Total Power Dissipation (Ptot) at TC=25°C | — | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | 5.0 V (typ), 6.5 V (max) |
| Tegangan Pengumpul-Pemancar (Vce(sat)) | — | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) |
| Short-Circuit Withstand Time (tsc) | — | 5 µs min at VCE=360V, TJ≤150°C |
| Suhu Hubungan Operasi | — | -40 °C to +150 °C |
| Co-packaged Diode | — | Anti-parallel EmCon3 diode |
| Aras MSL | — | 1 |