IKD06N60RATMA1 vs IGB50N60TATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IKD06N60RATMA1 tarafından Infineon ve IGB50N60TATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IKD06N60RATMA1 | IGB50N60TATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | IGBTs | IGBTs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | IGBT - Trench Field Stop with anti-parallel diode | — |
| Configuration | Single with built-in diode | Single |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous Collector Current (IC) at TC=25C | 12 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current] | — |
| Maximum Power Dissipation | 100 W | — |
| Gate-Emitter Voltage (VGE) | [DATA_NEEDED: VGE max rating] | — |
| Technology | TRENCHSTOP RC-IGBT3 (Reverse Conducting) | Trench + Field-Stop |
| VCE(sat) at IC=6A, VGE=15V | [DATA_NEEDED: VCE(sat) typical] | — |
| Diode Forward Voltage (VF) at IF=6A | [DATA_NEEDED: VF typical] | — |
| İşletim Sıcaklığı Aralığı | -40C to +150C (junction) | — |
| Paket | PG-TO252-3 (DPAK) | PG-TO263-3-2 (D2PAK / TO-263) |
| Montaj Türü | Surface Mount | Surface Mount |
| Pin Sayısı | 3 (2 + Tab) | — |
| RoHS Durumu | Compliant | Compliant |
| Automotive Qualified | Yes (per FindIC listing) | — |
| Switching Frequency Range (typical) | 4 kHz to 20 kHz (hard-switching) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | Trenchstop IGBT3 |
| Collector-Emitter Voltage (VCES) | — | 600 V |
| Continuous Collector Current (IC) at TC=25°C | — | 100 A |
| Continuous Collector Current (IC) at TC=100°C | — | 50 A |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | — | 150 A |
| Total Power Dissipation (Ptot) at TC=25°C | — | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | 5.0 V (typ), 6.5 V (max) |
| Toplayıcı-Emisör Doldurma电压 (Vce(sat)) | — | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) |
| Short-Circuit Withstand Time (tsc) | — | 5 µs min at VCE=360V, TJ≤150°C |
| İşletim Jant Sıcaklığı | — | -40 °C to +150 °C |
| Co-packaged Diode | — | Anti-parallel EmCon3 diode |
| MSL Seviyesi | — | 1 |