IKD06N60RATMA1 vs IGB50N60TATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IKD06N60RATMA1 sa pamamagitan ng Infineon at IGB50N60TATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IKD06N60RATMA1 | IGB50N60TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | IGBTs | IGBTs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | IGBT - Trench Field Stop with anti-parallel diode | — |
| Configuration | Single with built-in diode | Single |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous Collector Current (IC) at TC=25C | 12 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current] | — |
| Maximum Power Dissipation | 100 W | — |
| Gate-Emitter Voltage (VGE) | [DATA_NEEDED: VGE max rating] | — |
| Technology | TRENCHSTOP RC-IGBT3 (Reverse Conducting) | Trench + Field-Stop |
| VCE(sat) at IC=6A, VGE=15V | [DATA_NEEDED: VCE(sat) typical] | — |
| Diode Forward Voltage (VF) at IF=6A | [DATA_NEEDED: VF typical] | — |
| Hanay ng Temperature na Operasyon | -40C to +150C (junction) | — |
| Packhaging | PG-TO252-3 (DPAK) | PG-TO263-3-2 (D2PAK / TO-263) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (2 + Tab) | — |
| Tindminan RoHS | Compliant | Compliant |
| Automotive Qualified | Yes (per FindIC listing) | — |
| Switching Frequency Range (typical) | 4 kHz to 20 kHz (hard-switching) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | Trenchstop IGBT3 |
| Collector-Emitter Voltage (VCES) | — | 600 V |
| Continuous Collector Current (IC) at TC=25°C | — | 100 A |
| Continuous Collector Current (IC) at TC=100°C | — | 50 A |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | — | 150 A |
| Total Power Dissipation (Ptot) at TC=25°C | — | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | 5.0 V (typ), 6.5 V (max) |
| Voltage ng Collector-Emitter na Naging饱和 (Vce(sat)) | — | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) |
| Short-Circuit Withstand Time (tsc) | — | 5 µs min at VCE=360V, TJ≤150°C |
| Temperature ng Junction na Operasyon | — | -40 °C to +150 °C |
| Co-packaged Diode | — | Anti-parallel EmCon3 diode |
| Level ng MSL | — | 1 |