IKW20N60TFKSA1 vs IKW50N65H5FKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IKW20N60TFKSA1 sa pamamagitan ng Infineon at IKW50N65H5FKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IKW20N60TFKSA1 | IKW50N65H5FKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | IGBTs | Transistors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IKW20N60TFKSA1 | — |
| Part Status | Active | — |
| IGBT Type | Trench Field Stop | — |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | — |
| Current - Collector (Ic) Max @ 25C | 40 A | — |
| Current - Collector (Ic) Continuous | 20 A | — |
| Power - Max | 166 W | — |
| Switching Energy (Eon+Eoff) | [DATA_NEEDED: switching energy value] | — |
| Vce(on) at Ic, Tj=25C | [DATA_NEEDED: Vce(sat) at rated condition] | — |
| Gate Charge (Qg) | [DATA_NEEDED: gate charge value] | — |
| Input Capacitance (Cies) | [DATA_NEEDED: input capacitance value] | — |
| Reverse Recovery Time (trr) of co-packaged diode | [DATA_NEEDED: trr value] | — |
| Td(on)/Td(off) | [DATA_NEEDED: turn-on/off delay times] | — |
| Operating Temperature Junction (Tj) | -40C to +175C | — |
| Packhaging / Kaso | TO-247-3 (PG-TO247-3-1) | — |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Diode Configuration | Anti-parallel (co-packaged, full-rated) | — |
| Tindminan RoHS | Compliant | Compliant (per Infineon) |
| Technology Family | TRENCHSTOP IGBT3 | — |
| Product Type | — | IGBT Single Transistor |
| Technology | — | TRENCHSTOP 5 (H5 high-speed family) |
| Collector-Emitter Voltage (VCE) | — | 650 V |
| Continuous Collector Current (IC, TC=25C) | — | 80 A |
| Continuous Collector Current (IC, TC=100C) | — | 50 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: ICM value] |
| Maximum Power Dissipation (Ptot) | — | 305 W |
| Voltage ng Collector-Emitter na Naging饱和 (Vce(sat)) | — | 1.65 V at IC = 50 A |
| Gate-Emitter Voltage (VGE) max | — | 20 V (typical rating) |
| Gate Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th) value] |
| Built-in Diode | — | Yes, anti-parallel co-packaged diode |
| Operating Junction Temperature (Tj) | — | -40 C to +175 C (typical IGBT max) |
| Packhaging | — | TO-247 (PG-TO247-3), 3 pins |
| Packing | — | Tube (240 pcs/tube per Infineon product page) |
| Katayuan ng Lifecycle | — | Active (per Infineon product page) |