IKW20N60TFKSA1 vs IKW50N65H5FKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IKW20N60TFKSA1 disebabkan oleh Infineon dan IKW50N65H5FKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IKW20N60TFKSA1 | IKW50N65H5FKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | IGBTs | Transistors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IKW20N60TFKSA1 | — |
| Part Status | Active | — |
| IGBT Type | Trench Field Stop | — |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | — |
| Current - Collector (Ic) Max @ 25C | 40 A | — |
| Current - Collector (Ic) Continuous | 20 A | — |
| Power - Max | 166 W | — |
| Switching Energy (Eon+Eoff) | [DATA_NEEDED: switching energy value] | — |
| Vce(on) at Ic, Tj=25C | [DATA_NEEDED: Vce(sat) at rated condition] | — |
| Gate Charge (Qg) | [DATA_NEEDED: gate charge value] | — |
| Input Capacitance (Cies) | [DATA_NEEDED: input capacitance value] | — |
| Reverse Recovery Time (trr) of co-packaged diode | [DATA_NEEDED: trr value] | — |
| Td(on)/Td(off) | [DATA_NEEDED: turn-on/off delay times] | — |
| Operating Temperature Junction (Tj) | -40C to +175C | — |
| Kemasan / Case | TO-247-3 (PG-TO247-3-1) | — |
| Jenis Pemasangan | Through Hole | Through Hole |
| Diode Configuration | Anti-parallel (co-packaged, full-rated) | — |
| Status RoHS | Compliant | Compliant (per Infineon) |
| Technology Family | TRENCHSTOP IGBT3 | — |
| Product Type | — | IGBT Single Transistor |
| Technology | — | TRENCHSTOP 5 (H5 high-speed family) |
| Collector-Emitter Voltage (VCE) | — | 650 V |
| Continuous Collector Current (IC, TC=25C) | — | 80 A |
| Continuous Collector Current (IC, TC=100C) | — | 50 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: ICM value] |
| Maximum Power Dissipation (Ptot) | — | 305 W |
| Tegangan Pengumpul-Pemancar (Vce(sat)) | — | 1.65 V at IC = 50 A |
| Gate-Emitter Voltage (VGE) max | — | 20 V (typical rating) |
| Gate Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th) value] |
| Built-in Diode | — | Yes, anti-parallel co-packaged diode |
| Operating Junction Temperature (Tj) | — | -40 C to +175 C (typical IGBT max) |
| Kemasan | — | TO-247 (PG-TO247-3), 3 pins |
| Packing | — | Tube (240 pcs/tube per Infineon product page) |
| Status Lingkungan Hidup | — | Active (per Infineon product page) |