IKW20N60TFKSA1 vs IKW50N65H5FKSA1 तुलना
विस्तृत दोनों ओर की तुलना IKW20N60TFKSA1 द्वारा Infineon और IKW50N65H5FKSA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IKW20N60TFKSA1 | IKW50N65H5FKSA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | IGBTs | Transistors |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IKW20N60TFKSA1 | — |
| Part Status | Active | — |
| IGBT Type | Trench Field Stop | — |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | — |
| Current - Collector (Ic) Max @ 25C | 40 A | — |
| Current - Collector (Ic) Continuous | 20 A | — |
| Power - Max | 166 W | — |
| Switching Energy (Eon+Eoff) | [DATA_NEEDED: switching energy value] | — |
| Vce(on) at Ic, Tj=25C | [DATA_NEEDED: Vce(sat) at rated condition] | — |
| Gate Charge (Qg) | [DATA_NEEDED: gate charge value] | — |
| Input Capacitance (Cies) | [DATA_NEEDED: input capacitance value] | — |
| Reverse Recovery Time (trr) of co-packaged diode | [DATA_NEEDED: trr value] | — |
| Td(on)/Td(off) | [DATA_NEEDED: turn-on/off delay times] | — |
| Operating Temperature Junction (Tj) | -40C to +175C | — |
| पैकेज / केस | TO-247-3 (PG-TO247-3-1) | — |
| माउंटिंग प्रकार | Through Hole | Through Hole |
| Diode Configuration | Anti-parallel (co-packaged, full-rated) | — |
| RoHS स्थिति | Compliant | Compliant (per Infineon) |
| Technology Family | TRENCHSTOP IGBT3 | — |
| Product Type | — | IGBT Single Transistor |
| Technology | — | TRENCHSTOP 5 (H5 high-speed family) |
| Collector-Emitter Voltage (VCE) | — | 650 V |
| Continuous Collector Current (IC, TC=25C) | — | 80 A |
| Continuous Collector Current (IC, TC=100C) | — | 50 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: ICM value] |
| Maximum Power Dissipation (Ptot) | — | 305 W |
| कलेक्टर-एमिटर सैचुरेशन वोल्टेज (Vce(sat)) | — | 1.65 V at IC = 50 A |
| Gate-Emitter Voltage (VGE) max | — | 20 V (typical rating) |
| Gate Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th) value] |
| Built-in Diode | — | Yes, anti-parallel co-packaged diode |
| Operating Junction Temperature (Tj) | — | -40 C to +175 C (typical IGBT max) |
| पैकेज | — | TO-247 (PG-TO247-3), 3 pins |
| Packing | — | Tube (240 pcs/tube per Infineon product page) |
| लाइफसाइकिल स्थिति | — | Active (per Infineon product page) |