IMT40R011M2HXTMA1 - 400V 11mΩ CoolSiC™ G2 SiC MOSFET | Infineon
MPN: IMT40R011M2HXTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $13.96 | $13.96 |
| 10 | $12.45 | $124.50 |
| 100 | $10.85 | $1,085.00 |
| 500 | $9.62 | $4,810.00 |
| 1,000 | $8.74 | $8,740.00 |
IMT40R011M2HXTMA1 Overview
A silicon-carbide MOSFET (SiC MOSFET) is a wide-bandgap power transistor built on a 4H-SiC epitaxial layer rather than silicon, delivering roughly 3× the bandgap and 10× the breakdown field of silicon devices. In the power-converter hierarchy, SiC MOSFETs sit between silicon super-junction MOSFETs and GaN HEMTs, enabling higher switching frequencies, higher blocking voltages, and significantly lower switching losses. They replace silicon IGBTs in 400-1700 V applications where efficiency, power density, and thermal robustness matter more than absolute lowest cost.
Key features of the IMT40R011M2H include a benchmark gate-threshold voltage VGS(th) = 4.5 V, recommended gate-driving voltage of 0 V to 18 V, commutation-robust fast body diode with low Qfr, low RDS(on) temperature dependency, and 100 % avalanche testing. The PG-HSOF-8-2 package combines a top-side source-connected metal pad with a bottom-side drain pad to minimize source-inductance loop area, supporting clean switching at 100 kHz to several hundred kHz. The internal XT interconnection technology lowers package parasitic resistance and inductance versus conventional bond-wire SiC packages.
Typical applications include AI-server 400 V power-supply units (PSUs), telecom SMPS front-end PFC and LLC stages, 2- and 3-level solar inverters, energy-storage DC-DC converters, and high-frequency motor drives. Infineon rates the part for hard-switched and soft-switched topologies and positions it as a drop-in for previous-generation 400 V SiC devices in the same footprint. The combination of 11 mΩ RDS(on) and a robust body diode also makes it attractive as a synchronous rectification element in LLC resonant converters where reverse-recovery loss dominates.
When designing with this part, observe the recommended gate-drive window of 0 V to 18 V and place the gate-driver within 5 mm of the device to suppress the parasitic turn-on induced by dV/dt and the source lead inductance. For hard-switched PFC at 100 kHz+, a -3 V to +18 V drive with a properly sized external gate resistor is recommended. Verify junction-to-case thermal resistance against your heatsink design - the 429 W (Tc) power-handling figure assumes an infinite heatsink at 25 °C and is not achievable in real PCB layouts.
Drop-in alternatives for IMT40R011M2HXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IMT40R011M2HXTMA1 (same form factor and footprint) — differing in Drain-Source Voltage (VDS), Package, Technology.
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View Datasheet →IMT40R011M2HXTMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | CoolSiC™ MOSFET 400 V G2 |
| Drain-Source Voltage (VDS) | 400 V |
| On-Resistance RDS(on), typ | 11 mΩ |
| Continuous Drain Current (Ta, 25 °C) | 13.4 A |
| Continuous Drain Current (Tc, case) | 144 A |
| Power Dissipation (Ta) | 3.8 W |
| Power Dissipation (Tc) | 429 W |
| Gate Threshold Voltage VGS(th) | 4.5 V (typ, benchmark) |
| Recommended Gate Drive Voltage | 0 V to 18 V |
| Technology | Silicon Carbide (SiC) Trench MOSFET |
| Package | PG-HSOF-8-2 (surface mount) |
| Mounting Type | Surface Mount |
| Avalanche Rating | 100 % avalanche tested |
| Body Diode | Fast body diode, low Qfr |
| Interconnection Technology | XT (best-in-class thermal) |
| Compliance | RoHS compliant (per Infineon product page) |
IMT40R011M2HXTMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (0 V to 18 V recommended) |
| Pin 2 | Source (Kelvin) — Source sense / Kelvin return for gate driver |
| Pin 3 | Source — Source connection (parallel pins for low inductance) |
| Pin 4 | Source — Source connection (parallel pins for low inductance) |
| Pin 5 | Source — Source connection (parallel pins for low inductance) |
| Pin 6 | Source — Source connection (parallel pins for low inductance) |
| Pin 7 | Source — Source connection (parallel pins for low inductance) |
| Pin 8 | NC / Drain tab — Not connected electrically; mechanical tie to drain pad on top side |
Safe Operating Area (DC, TC=25°C, VGS=18V)
Typical Applications
IMT40R011M2HXTMA1 is suitable for 6 applications: AI Server 400 V Power Supply (PSU), Telecom SMPS PFC + LLC Front-End, Solar Inverter DC-DC Stage (2-/3-Level Topology), Energy Storage Bidirectional DC-DC Converter, High-Frequency Motor Drive, EV On-Board Charger (OBC) PFC Stage.
AI Server 400 V Power Supply (PSU)
The IMT40R011M2HXTMA1's 400 V drain-source rating and 11 mΩ RDS(on) make it well-suited to AI-server 400 V PSU front-end PFC and LLC stages where the high power density and 80+ Titanium efficiency targets demand switching frequencies of 100 kHz or more. Placed as the synchronous-rectification MOSFET in a 400 V LLC resonant half-bridge, the SiC body diode eliminates reverse-recovery shoot-through, allowing tighter dead-time and higher conversion efficiency versus silicon super-junction MOSFETs. The 429 W Tc power dissipation rating and XT interconnection technology also support smaller heatsinks than silicon alternatives at the same RMS current, critical for the high power density of 1U-2U server PSUs.
Recommended
Telecom SMPS PFC + LLC Front-End
In a 48 V-output telecom rectifier accepting 230 VAC input, the IMT40R011M2HXTMA1 serves as the primary switch in a totem-pole bridgeless PFC stage. The SiC device's zero reverse-recovery body diode is essential for continuous-conduction-mode totem-pole operation, where silicon MOSFETs would generate prohibitive reverse-recovery losses. Switching at 100-200 kHz, the 11 mΩ RDS(on) keeps conduction loss acceptable while achieving >99 % PFC efficiency. The 0-18 V gate-drive window is compatible with industry-standard SiC gate-driver ICs (e.g. UCC21750, 1ED020I12B2XUMA1), simplifying the gate path.
Recommended
Solar Inverter DC-DC Stage (2-/3-Level Topology)
The IMT40R011M2HXTMA1 is a strong fit for 1500 V-bus solar inverters' 2-level DC-DC boost stages and 3-level NPC/T-type legs. The 400 V part is appropriate for the lower-side switches of a 3-level topology where each switch sees half the bus voltage. At 50 kHz switching the part's low switching loss improves weighted inverter efficiency by 0.3-0.5 % versus silicon MOSFETs, which translates directly into higher $/kWh revenue for the installer. The 100 % avalanche rating and commutation-robust body diode also tolerate the occasional short-circuit transient from grid-side faults.
Recommended
Energy Storage Bidirectional DC-DC Converter
Battery energy-storage systems (BESS) use bidirectional DC-DC converters between a 400 V DC bus and a lower-voltage battery pack. The IMT40R011M2HXTMA1 serves as the high-side or low-side synchronous switch in a CLLC resonant or hard-switched bidirectional topology. The low RDS(on) of 11 mΩ minimizes conduction loss during both charge and discharge cycles, and the SiC body diode enables clean resonant transitions in CLLC mode. The 144 A Tc rating supports >30 kW per half-bridge without paralleling, which reduces BOM complexity in residential and small-commercial BESS products.
Recommended
High-Frequency Motor Drive
Industrial servo drives and high-speed spindle motors benefit from SiC MOSFETs in the inverter stage. The IMT40R011M2HXTMA1, switching at 50-100 kHz, enables smaller output-filter inductors and capacitors, reducing the drive footprint by 30-50 % versus silicon IGBT solutions. At 400 V bus with 144 A continuous Tc current rating, a single half-bridge of the IMT40R011M2H supports motors up to ~10 kW. The 100 % avalanche rating provides margin against inductive-kickback events from motor winding transients, and the commutation-robust body diode tolerates the dead-time overlap.
Recommended
EV On-Board Charger (OBC) PFC Stage
On-board EV chargers accept single-phase or three-phase AC input and deliver 400-800 VDC to the traction battery. The IMT40R011M2HXTMA1 is well-matched to OBC PFC stages operating from 230 VAC (400 VDC bus). The SiC MOSFET's zero-recovery body diode enables totem-pole bridgeless PFC, eliminating the input diode bridge that otherwise costs 1-1.5 % efficiency. Combined with the 11 mΩ RDS(on), this allows >98.5 % peak PFC efficiency. The 0-18 V gate-drive window matches automotive SiC gate-driver ICs (e.g. 1ED31xx, TLE9180), and the surface-mount PG-HSOF-8-2 package supports automated high-volume OBC manufacturing.
Recommended
Recommended Products Summary
Engineering reference data for IMT40R011M2HXTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IMT40R015M2HXTMA1 | IMT40R007M2HXTMA1 | IMT65R011M2HXTMA1 | IMW40R011M2HXTMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-8-2 | PG-HSOF-8-2 - same | PG-HSOF-8-2 - same | PG-HSOF-8-2 - same | PG-HSOF-8-2 - same | PG-HSOF-8-2 - same |
| VDS (Drain-Source Voltage) | 400 V | 400 V | 400 V | 650 V | 400 V | 40 V |
| RDS(on) typical | 11 mΩ | 15 mΩ | 7 mΩ | 11 mΩ | 11 mΩ | 1.1 mΩ |
| Technology | SiC Trench MOSFET | SiC Trench MOSFET | SiC Trench MOSFET | SiC Trench MOSFET | SiC Trench MOSFET | Silicon MOSFET (OptiMOS 7) |
| Gate Drive Window | 0 V to 18 V | 0 V to 18 V | 0 V to 18 V | 0 V to 18 V | 0 V to 18 V | 0 V to 10 V (silicon) |
Key Differentiators
- CoolSiC™ G2 trench technology with XT interconnection (vs Infineon CoolSiC™ G1 (older generation))
- 400 V-optimized for 230 VAC PFC stages (vs IMT65R011M2HXTMA1 (650 V version))
- Benchmark VGS(th) = 4.5 V for noise immunity (vs Generic 400 V SiC MOSFET with VGS(th) = 2.5-3.5 V)
Design Notes
Layout the gate-driver loop within 5 mm of the Gate and Source (Kelvin) pins to minimize the source-loop inductance; the SiC device's high dV/dt (50 kV/μs+) amplifies any parasitic inductance into a miller-induced turn-on transient. Keep the high-current drain-source loop area minimal - use a tight vertical power-loop through the top-side drain pad and bottom-side source pad, not the side leads. Provide a 1-2 oz copper pour or thermal via array directly under the exposed drain pad for heatsinking; the package is rated 429 W at Tc only with an infinite heatsink at 25 °C.
Estimated junction-to-ambient thermal resistance on a 4-layer JEDEC-51 test board is approximately 50-62 °C/W depending on copper area. At 100 W dissipation (achievable in a hard-switched PFC stage), this translates to a 150-200 °C junction-to-ambient delta above 25 °C ambient - well beyond the 150 °C max junction. Either reduce RMS dissipation or add a forced-air or cold-plate heatsink. The Infineon datasheet's 429 W Tc figure is for a perfectly cooled case and is not a practical target on a PCB.
Do not drive the IMT40R011M2HXTMA1 with a single +12 V or +15 V gate-source voltage, even though it appears to work - the 4.5 V VGS(th) is high enough that it will turn on at +12 V, but the recommended gate-drive window of 0-18 V with a -3 V to +18 V asymmetric swing (turn-off below 0 V) is required to ensure robust turn-off under high dV/dt. Use a SiC-specific gate-driver IC such as 1ED020I12B2XUMA1 rather than a generic silicon MOSFET driver. Also, never exceed VGS = +20 V; the device's gate-oxide absolute maximum is +20 V and -10 V.
Place at least one 100 nF X7R ceramic bypass capacitor between the +18 V gate-driver supply and the source Kelvin pin of the IMT40R011M2HXTMA1, within 2 mm of the gate pin. Use a wide gate-trace (0.5 mm or wider) and route the source-return trace directly back to the driver, not to the power ground. For a half-bridge, the high-side and low-side gate-driver supplies should be fully isolated; use a bootstrap+diodes or isolated DC-DC converter such as 1EDS20I12SVXUMA1 family.
The 50-100 kV/μs dV/dt capability of this SiC MOSFET will excite resonances in any parasitic LC network on the PCB, generating common-mode EMI in the 30-100 MHz range. Add a 10-100 nF Y-cap from the DC bus to protective earth at the converter input, and consider an R-C snubber (10-22 Ω + 1-4.7 nF) across the SiC drain-source to slow the switching edge in EMI-sensitive applications. A ferrite bead on the gate is also effective at damping high-frequency gate-oscillation.
Compliance Information
RoHS and REACH compliance per Infineon product page. AEC-Q100 not applicable for industrial/consumer part; automotive versions exist in the same family with different suffixes (check Infineon automotive portfolio). Halogen-free per Infineon MSL documentation.
