IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon
MPN: IPW60R080P7XKSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.78 | $37.80 |
| 100 | $3.35 | $335.00 |
| 500 | $2.95 | $1,475.00 |
| 1,000 | $2.65 | $2,650.00 |
Drop-in alternatives for IPW60R080P7XKSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPW60R070P7XKSA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPW60R099P6XKSA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPW60R041P7XKSA1
✅ Drop-In📋 Reference alternative (not in catalog)
STW47N60M2
✅ Drop-In📋 Reference alternative (not in catalog)
STF28N60M2
✅ Drop-In📋 Reference alternative (not in catalog)
IRFP4668PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IPW60R080P7XKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolMOS P7 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc) | 37 A |
| Power Dissipation (PD, Tc) | 129 W |
| RDS(on) (typ) | 69 mΩ at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V (typ, per datasheet family) |
| Operating Temperature Range | -55 C to +150 C (junction) |
| Package | PG-TO247-3 (TO-247, 3-pin through-hole) |
| Mounting Type | Through Hole |
| Packaging | Tube (XKSA1 ordering suffix) |
| RoHS Status | Compliant |
IPW60R080P7XKSA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate control input |
| Pin 2 | Drain (Tab) — MOSFET drain, internally connected to metal tab |
| Pin 3 | Source — MOSFET source |
Safe Operating Area (SOA)
Typical Applications
IPW60R080P7XKSA1 is suitable for 7 applications: Power Factor Correction Stage (PFC), LLC Resonant Converter, Solar String Inverter, EV On-Board Charger PFC Stage, Industrial Motor Drive Inverter, Telecom Server SMPS (Front-End Rectifier), Welding and Plasma Power Supplies.
Power Factor Correction Stage (PFC)
The IPW60R080P7XKSA1 fits perfectly in continuous-conduction-mode (CCM) boost PFC stages fed from rectified 230 V AC mains. With 600 V VDS headroom and 69 mΩ RDS(on), conduction loss at 50 Hz line cycle remains below 2 W at 2 kW PFC output, while the CoolMOS P7 superjunction technology reduces switching loss vs the older P6 generation. Pair it with a UCC28180 or NCP1654 CCM-PFC controller for best results.
Recommended
LLC Resonant Converter
The IPW60R080P7XKSA1's low RDS(on) and optimized output capacitance make it suitable for half-bridge and full-bridge LLC resonant converters in telecom/server SMPS. Operating between 100 kHz and 200 kHz, the MOSFET keeps switching losses manageable while delivering the 600 V margin required for rectified 380 V DC bus. Verify ZVS operation across the load range for best efficiency.
Recommended
Solar String Inverter
The IPW60R080P7XKSA1 is used in the DC-DC boost stage and DC-AC inverter section of single-phase solar inverters from 3 kW to 5 kW. The 600 V rating handles up to 1000 V DC string open-circuit voltage with adequate margin, while 37 A continuous drain current supports full-power operation without paralleling. CoolMOS P7's integrated snubber-less design reduces BOM cost versus older P6 generations.
Recommended
EV On-Board Charger PFC Stage
The IPW60R080P7XKSA1 fits as the main boost switch in 3.3 kW to 11 kW on-board EV charger PFC front-ends. With AEC-Q101 potential applicability and 600 V VDS rating, it handles rectified 230 V or 400 V AC mains reliably. The 129 W power dissipation and TO-247-3 package enable straightforward thermal management with a clip-mounted heatsink in IP65 sealed enclosures.
Recommended
Industrial Motor Drive Inverter
The IPW60R080P7XKSA1 is used in three-phase IGBT/MOSFET inverter modules for industrial motor drives from 1 kW to 5 kW. Although IGBTs dominate at very high currents, MOSFETs excel at higher switching frequencies (>20 kHz) for low-inductance motors or sinusoidal filter applications. The rugged TO-247-3 mechanical construction survives vibration in industrial environments.
Recommended
Telecom Server SMPS (Front-End Rectifier)
The IPW60R080P7XKSA1 is ideal for 1U/2U server front-end rectifiers running from 230 V AC input and delivering 48 V or 12 V DC output. In the boost PFC and LLC primary stage, the 600 V rating provides margin against voltage transients, while low switching losses enable >96% peak efficiency. The TO-247-3 footprint is compatible with the Infineon reference design for 2400 W 48 V SMPS modules.
Recommended
Welding and Plasma Power Supplies
The IPW60R080P7XKSA1's 600 V VDS rating, avalanche ruggedness, and ability to handle peak surge currents make it suitable for inverter welding and plasma cutter power supplies. The TO-247-3 package handles the thermal stress of pulsed loads, while the low RDS(on) minimizes conduction loss at welding arc currents of 100-200 A peak.
Recommended
Recommended Products Summary
Engineering reference data for IPW60R080P7XKSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPW60R070P7XKSA1 | IPW60R099P6XKSA1 | IPW60R041P7XKSA1 | STW47N60M2 | STF28N60M2 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | STMicroelectronics |
| Package | PG-TO247-3 | PG-TO247-3 - same | PG-TO247-3 - same | PG-TO247-3 - same | TO-247-3 - same | TO-247-3 - same |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| RDS(on) typ | 69 mΩ | ~70 mΩ | ~99 mΩ | ~41 mΩ | ~70 mΩ | ~150 mΩ |
| Continuous Drain Current | 37 A | ~40 A | ~37 A | ~57 A | ~39 A | ~28 A |
| Power Dissipation (Tc) | 129 W | ~135 W | ~125 W | ~170 W | ~150 W | ~110 W |
| Generation / Family | CoolMOS P7 | CoolMOS P7 | CoolMOS P6 (older) | CoolMOS P7 | MDmesh M2 | MDmesh M2 |
| Integrated Snubber | Yes | Yes | No | Yes | No | No |
| Unit Price (qty 1, USD) | 4.20 | 4.65 | 3.10 | 7.20 | 5.50 | 3.80 |
Key Differentiators
- CoolMOS P7 superjunction technology reduces switching losses versus CoolMOS P6 (vs IPW60R099P6XKSA1)
- Integrated snubber / gate protection features (vs STW47N60M2)
- Wide RDS(on) scaling within same package family (vs IPW60R041P7XKSA1)
Design Notes
Estimated: at continuous ID = 37 A, conduction loss alone is roughly P_cond = ID^2 * RDS(on) = 37^2 * 0.069 = 94 W. Combined with switching loss at 100 kHz in hard-switching, total dissipation typically exceeds the 129 W Tc rating without a substantial heatsink. Use a TO-247 clip-on heatsink rated for <0.5 C/W with forced airflow, or compute junction temperature with TJ = TC + PD * RthJC and verify TJ < 150 C.
For through-hole TO-247-3 mounting, drill 1.5 mm holes with 2 mm copper pad annular ring. Keep the drain tab copper pour wide enough to act as a heatsink (at least 200 sq cm per side). Route gate traces away from drain to minimize dv/dt coupling, and place the gate driver within 30 mm to minimize parasitic inductance that can cause ringing above 50 V on the gate.
Do not exceed VGS rating of +/-20 V (some Infineon P7 parts allow +/-30 V transient); gate-source breakdown is irreversible. Always add a 10 kohm gate-source pull-down resistor to keep the MOSFET off during MCU power-up. In paralleled configurations, ensure matched gate-driver impedances and balanced source inductances to avoid current hogging and thermal runaway.
Although CoolMOS P7 has fast switching edges (dV/dt up to 50 V/ns), the snubber-less internal design helps EMI. Add a small RC snubber (10 ohm + 1 nF) across the drain-source if radiated EMI exceeds CISPR 22/32 limits. Place the snubber within 5 mm of the device pins to be effective.
Compliance Information
RoHS compliant per Infineon product page. Industrial-grade part; AEC-Q100 qualification does not apply to the standard XKSA1 suffix - check automotive-grade variants separately. Lead-free reflow: TO-247-3 is through-hole with wave soldering, manual soldering, or pin-in-paste reflow compatible.
