IPB019N08N3GATMA1 vs AUIRF7640S2TR Comparison
Detailed side-by-side comparison of IPB019N08N3GATMA1 by Infineon and AUIRF7640S2TR by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB019N08N3GATMA1 - 80V 180A 1.9mΞ© OptiMOS 3 N-MOSFET | Infineon
IPB019N08N3GATMA1 β ActiveInfineon
AUIRF7640S2TR
AUIRF7640S2TR - 60V 21A DirectFET MOSFET for Class D | Infineon
AUIRF7640S2TR β ActiveSpecification Comparison
| Parameter | IPB019N08N3GATMA1 | AUIRF7640S2TR |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.74 | $1.18 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | HEXFET Power MOSFET (Automotive Grade) |
| Drain-to-Source Voltage (Vdss) | 80 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 180 A | β |
| Power Dissipation (Pd) @ Tc=25Β°C | 300 W | β |
| On-Resistance RDS(on) Max @ VGS=10V | 1.9 mΞ© | β |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V | β |
| Drive Voltage (Rds On Max) | 6 V, 10 V | β |
| Total Gate Charge (Qg) @ VGS=10V | 206 nC | β |
| Input Capacitance (Ciss) | 14.2 nF | β |
| Output Capacitance (Coss) | 3.84 nF | β |
| Reverse Transfer Capacitance (Crss) | 3.84 nF | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -40C to +150C [DATA_NEEDED: junction temp upper limit] |
| Package | PG-TO263-7 (D2PAK-6, surface mount) | DirectFET SB (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant [DATA_NEEDED: confirmed in datasheet] |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) @ TA=25C | β | 5.8 A |
| Continuous Drain Current (ID) @ TC=25C | β | 21 A |
| Power Dissipation (PD) @ TA=25C | β | 2.4 W |
| Power Dissipation (PD) @ TC=25C | β | 30 W |
| On-Resistance RDS(on) | β | 36 mΞ© |
| Total Gate Charge (Qg) | β | 7.3 nC |
| Automotive Qualification | β | AEC-Q101 (Automotive Grade per datasheet) |
| Primary Application | β | Automotive Class D audio amplifier output stage |