IPB019N08N3GATMA1 vs AUIRF7640S2TR Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB019N08N3GATMA1 sa pamamagitan ng Infineon at AUIRF7640S2TR sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IPB019N08N3GATMA1 AUIRF7640S2TR
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) HEXFET Power MOSFET (Automotive Grade)
Drain-to-Source Voltage (Vdss) 80 V —
Continuous Drain Current (Id) @ Tc=25°C 180 A —
Power Dissipation (Pd) @ Tc=25°C 300 W —
On-Resistance RDS(on) Max @ VGS=10V 1.9 mΩ —
Gate Threshold Voltage (Vgs(th)) 3.5 V —
Drive Voltage (Rds On Max) 6 V, 10 V —
Total Gate Charge (Qg) @ VGS=10V 206 nC —
Input Capacitance (Ciss) 14.2 nF —
Output Capacitance (Coss) 3.84 nF —
Reverse Transfer Capacitance (Crss) 3.84 nF —
Hanay ng Temperature na Operasyon -55 °C to +175 °C -40C to +150C [DATA_NEEDED: junction temp upper limit]
Packhaging PG-TO263-7 (D2PAK-6, surface mount) DirectFET SB (Surface Mount)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant [DATA_NEEDED: confirmed in datasheet]
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) @ TA=25C — 5.8 A
Continuous Drain Current (ID) @ TC=25C — 21 A
Power Dissipation (PD) @ TA=25C — 2.4 W
Power Dissipation (PD) @ TC=25C — 30 W
On-Resistance RDS(on) — 36 mΩ
Total Gate Charge (Qg) — 7.3 nC
Automotive Qualification — AEC-Q101 (Automotive Grade per datasheet)
Primary Application — Automotive Class D audio amplifier output stage

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