IPB019N08N3GATMA1 vs AUIRF7640S2TR Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPB019N08N3GATMA1 tarafından Infineon ve AUIRF7640S2TR tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPB019N08N3GATMA1 | AUIRF7640S2TR |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | HEXFET Power MOSFET (Automotive Grade) |
| Drain-to-Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 180 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 300 W | — |
| On-Resistance RDS(on) Max @ VGS=10V | 1.9 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V | — |
| Drive Voltage (Rds On Max) | 6 V, 10 V | — |
| Total Gate Charge (Qg) @ VGS=10V | 206 nC | — |
| Input Capacitance (Ciss) | 14.2 nF | — |
| Output Capacitance (Coss) | 3.84 nF | — |
| Reverse Transfer Capacitance (Crss) | 3.84 nF | — |
| İşletim Sıcaklığı Aralığı | -55 °C to +175 °C | -40C to +150C [DATA_NEEDED: junction temp upper limit] |
| Paket | PG-TO263-7 (D2PAK-6, surface mount) | DirectFET SB (Surface Mount) |
| Montaj Türü | Surface Mount | Surface Mount |
| RoHS Durumu | Compliant | Compliant [DATA_NEEDED: confirmed in datasheet] |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) @ TA=25C | — | 5.8 A |
| Continuous Drain Current (ID) @ TC=25C | — | 21 A |
| Power Dissipation (PD) @ TA=25C | — | 2.4 W |
| Power Dissipation (PD) @ TC=25C | — | 30 W |
| On-Resistance RDS(on) | — | 36 mΩ |
| Total Gate Charge (Qg) | — | 7.3 nC |
| Automotive Qualification | — | AEC-Q101 (Automotive Grade per datasheet) |
| Primary Application | — | Automotive Class D audio amplifier output stage |