IPB019N08N3GATMA1 vs IRFB7545PBF 比較
詳細並排比較 IPB019N08N3GATMA1 由 Infineon 與 IRFB7545PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB019N08N3GATMA1 | IRFB7545PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | StrongIRFET™ (HEXFET, N-Channel) |
| Drain-to-Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 180 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 300 W | — |
| On-Resistance RDS(on) Max @ VGS=10V | 1.9 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V | — |
| Drive Voltage (Rds On Max) | 6 V, 10 V | — |
| Total Gate Charge (Qg) @ VGS=10V | 206 nC | — |
| Input Capacitance (Ciss) | 14.2 nF | — |
| Output Capacitance (Coss) | 3.84 nF | — |
| Reverse Transfer Capacitance (Crss) | 3.84 nF | — |
| 工作溫度範圍 | -55 °C to +175 °C | — |
| 封裝 | PG-TO263-7 (D2PAK-6, surface mount) | TO-220AB (Through-Hole) |
| 安裝類型 | Surface Mount | Through Hole (THT) |
| RoHS 狀態 | Compliant | — |
| Part Number | — | IRFB7545PBF |
| Polarity | — | N-Channel |
| VDS (Drain-Source Voltage) max | — | 60 V |
| VGS (Gate-Source Voltage) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 5.9 mOhm |
| Continuous Drain Current (ID) at Tc=25C | — | 95 A |
| Pulsed Drain Current (IDM) | — | 380 A |
| Single-Pulse Avalanche Current (IAS) | — | 57 A |
| Power Dissipation (PD) at Tc=25C | — | 125 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| 工作接面溫度 | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (Lead-Free, PBF suffix) |
| MSL 等級 | — | N/A (Through-Hole) |
| Gate Drive Voltage (typical) | — | 10 V |
| Avalanche Energy Rated | — | Yes |