IPB019N08N3GATMA1 vs IRFB7545PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB019N08N3GATMA1 disebabkan oleh Infineon dan IRFB7545PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB019N08N3GATMA1 IRFB7545PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) StrongIRFET™ (HEXFET, N-Channel)
Drain-to-Source Voltage (Vdss) 80 V —
Continuous Drain Current (Id) @ Tc=25°C 180 A —
Power Dissipation (Pd) @ Tc=25°C 300 W —
On-Resistance RDS(on) Max @ VGS=10V 1.9 mΩ —
Gate Threshold Voltage (Vgs(th)) 3.5 V —
Drive Voltage (Rds On Max) 6 V, 10 V —
Total Gate Charge (Qg) @ VGS=10V 206 nC —
Input Capacitance (Ciss) 14.2 nF —
Output Capacitance (Coss) 3.84 nF —
Reverse Transfer Capacitance (Crss) 3.84 nF —
Gambaran Suhu Operasi -55 °C to +175 °C —
Kemasan PG-TO263-7 (D2PAK-6, surface mount) TO-220AB (Through-Hole)
Jenis Pemasangan Surface Mount Through Hole (THT)
Status RoHS Compliant —
Part Number — IRFB7545PBF
Polarity — N-Channel
VDS (Drain-Source Voltage) max — 60 V
VGS (Gate-Source Voltage) max — ±20 V
RDS(on) max at VGS=10V — 5.9 mOhm
Continuous Drain Current (ID) at Tc=25C — 95 A
Pulsed Drain Current (IDM) — 380 A
Single-Pulse Avalanche Current (IAS) — 57 A
Power Dissipation (PD) at Tc=25C — 125 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Suhu Hubungan Operasi — -55C to +175C
Lead-Free / RoHS — Yes (Lead-Free, PBF suffix)
Aras MSL — N/A (Through-Hole)
Gate Drive Voltage (typical) — 10 V
Avalanche Energy Rated — Yes

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