IPB019N08N3GATMA1 vs IRFB7545PBF Perbandingan

Perbandingan bersamaan detil IPB019N08N3GATMA1 dari Infineon dan IRFB7545PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB019N08N3GATMA1 IRFB7545PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) StrongIRFET™ (HEXFET, N-Channel)
Drain-to-Source Voltage (Vdss) 80 V —
Continuous Drain Current (Id) @ Tc=25°C 180 A —
Power Dissipation (Pd) @ Tc=25°C 300 W —
On-Resistance RDS(on) Max @ VGS=10V 1.9 mΩ —
Gate Threshold Voltage (Vgs(th)) 3.5 V —
Drive Voltage (Rds On Max) 6 V, 10 V —
Total Gate Charge (Qg) @ VGS=10V 206 nC —
Input Capacitance (Ciss) 14.2 nF —
Output Capacitance (Coss) 3.84 nF —
Reverse Transfer Capacitance (Crss) 3.84 nF —
Rentang Suhu Kerja -55 °C to +175 °C —
Paket PG-TO263-7 (D2PAK-6, surface mount) TO-220AB (Through-Hole)
Tipe Mounting Surface Mount Through Hole (THT)
Status RoHS Compliant —
Part Number — IRFB7545PBF
Polarity — N-Channel
VDS (Drain-Source Voltage) max — 60 V
VGS (Gate-Source Voltage) max — ±20 V
RDS(on) max at VGS=10V — 5.9 mOhm
Continuous Drain Current (ID) at Tc=25C — 95 A
Pulsed Drain Current (IDM) — 380 A
Single-Pulse Avalanche Current (IAS) — 57 A
Power Dissipation (PD) at Tc=25C — 125 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Suhu Hubung Kerja — -55C to +175C
Lead-Free / RoHS — Yes (Lead-Free, PBF suffix)
Level MSL — N/A (Through-Hole)
Gate Drive Voltage (typical) — 10 V
Avalanche Energy Rated — Yes

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